Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy

TitleComparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy
Publication TypeConference Paper
Year of Publication1993
AuthorsJames S Chan, T.C. Fu, Nathan W Cheung, Jennifer T Ross, Nathan Newman, Michael D Rubin
Conference NameMaterials Research Society
Date Published04/1993
Conference LocationSan Francisco, CA
Other NumbersUC-400
Abstract

Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.

LBNL Report Number

LBL-35660