@article {58917, title = {Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition}, journal = {Journal of Materials Research}, volume = {27}, year = {2012}, month = {3/2012}, pages = {857 - 862}, abstract = {

Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 {\texttimes} 10-4 Ωcm. Resistivity as low as 5.2 {\texttimes} 10-4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films.

}, keywords = {physical vapor deposition, Plasma deposition, Transparent conductor}, issn = {0884-2914}, doi = {10.1557/jmr.2011.342}, author = {Yuankun Zhu and Rueben J. Mendelsberg and Sunnie H.N. Lim and Jiaqi Zhu and Jiecai Han and Andr{\'e} Anders} }