@article {12159, title = {P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg}, journal = {Applied Physics Letters}, volume = {64}, number = {1}, year = {1993}, pages = {64-66}, chapter = {64}, abstract = {

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p-type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p-type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p-type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5{\texttimes}1011 cm-3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.

}, keywords = {carrier density, carrier mobility, crystal doping, diffusion, evaporation, gallium nitrides, ion implantation, magnesium additions, molecular beam epitaxy, p-type conductors}, issn = {0003-6951}, doi = {10.1063/1.110870}, author = {Michael D. Rubin and Nathan Newman and James S. Chan and T.C. Fu and Jennifer T. Ross} }