@conference {11890,
	title = {Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy},
	year = {1994},
	abstract = {<p>Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.</p>},
	author = {Nathan Newman and T.C. Fu and Z. Liu and Zuzanna Liliental-Weber and Michael D. Rubin and James S. Chan and Erin C.  Jones and Jennifer T. Ross and Ian M. Tidswell and Kin Man Yu and Nathan W. Cheung and Eicke R. Weber}
}
