@conference {11636, title = {Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy}, booktitle = {Materials Research Society}, volume = {300}, year = {1993}, month = {04/1993}, address = {San Francisco, CA}, abstract = {

Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 {\textdegree}C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850 {\textdegree}C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.

}, author = {James S. Chan and T.C. Fu and Nathan W. Cheung and Jennifer T. Ross and Nathan Newman and Michael D. Rubin} }