@article {58921, title = {A Plasma Lens for Magnetron Sputtering}, journal = {IEEE Transactions on Plasma Science}, volume = {39}, year = {2011}, month = {11/2011}, pages = {2528 - 2529}, abstract = {

A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

}, issn = {0093-3813}, doi = {10.1109/TPS.2011.2157172}, author = {Andr{\'e} Anders and Jeff Brown} } @article {12182, title = {Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering}, journal = {Thin Solid Films}, volume = {515}, number = {8}, year = {2007}, month = {05/2007}, pages = {5264-5269}, chapter = {5264}, abstract = {

Amorphous and partially crystalline WO3 thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015 ions/cm2. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70{\textdegree}C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures

}, keywords = {Dual magnetron sputtering, electrical resistivity, Er ion implantation, optical properties, tungsten oxide films}, doi = {10.1016/j.tsf.2006.12.179}, author = {Sodky H. Mohamed and Andr{\'e} Anders} } @conference {1731, title = {Physics of High Power Impulse Magnetron Sputtering}, booktitle = {ISSP2007: The 9th International Symposium on Sputtering \& Plasma Processes}, year = {2007}, abstract = {

High power impulse magnetron sputtering is characterized by discharge pulses whose target power density exceeds conventional sputtering power densities by two orders of magnitude or more; the goal is to provide a large flux of ionized sputtered material. The processes of pulse evolution are briefly reviewed, including secondary electron emission, self-sputtering, and rarefaction. Using a pulse power supply capable of providing constant voltage for target peak power densities up to 5 kW/cm2, the evolution of the current-voltage characteristics was investigated for copper and titanium. It is shown that the characteristic cannot be reduced to value pairs. Rather, a strong but reproducible development exists. The details depend on the argon pressure and applied voltage. Each target material exhibits a distinct and sharp transition to a high current regime that appears to be dominated by metal plasma. Despite the higher sputter yields for copper, the transition to the high current regime occurs much earlier and stronger for titanium, which may be attributed to a higher secondary electron yield and hence a higher density of electrons confined in the magnetron structure. At high currents, the closed-drift Hall current generates a magnetic field that weakens plasma confinement, thereby enabling large ion currents to reach a biased substrate.

}, author = {Andr{\'e} Anders and Joakim Andersson and David Horwat and Arutiun P. Ehiasarian} } @conference {1732, title = {Plasma and Ion Assistance in Physical Vapor Deposition: A Historical Perspective}, booktitle = {50th Technical Annual Meeting of the Society of Vacuum Coaters}, year = {2007}, abstract = {

Deposition of films using plasma or plasma-assist can be traced back surprisingly far, namely to the 18th century for arcs and to the 19th century for sputtering. However, only since the 1960s the coatings community considered other processes than evaporation for large scale commercial use. Ion Plating was perhaps the first important process, introducing vapor ionization and substrate bias to generate a beam of ions arriving on the surface of the growing film. Rather independently, cathodic arc deposition was established as an energetic condensation process, first in the former Soviet Union in the 1970s, and in the 1980s in the Western Hemisphere.

About a dozen various ion-based coating technologies evolved in the last decades, all characterized by specific plasma or ion generation processes. Gridded and gridless ion sources were taken from space propulsion and applied to thin film deposition. Modeling and simulation have helped to make plasma and ions effects to be reasonably well understood. Yet{\textemdash}due to the complex, often non-linear and non-equilibrium nature of plasma and surface interactions{\textemdash}there is still a place for the experienced ion and plasma "sourcerer."

}, author = {Andr{\'e} Anders} } @article {12188, title = {Plasma biasing to control the growth conditions of diamond-like carbon}, journal = {Surface and Coatings Technology}, volume = {201}, year = {2006}, month = {01/2007}, pages = {4628-4632}, chapter = {4628}, abstract = {

It is well known that the structure and properties of diamond-like carbon, and in particular the sp3/sp2 ratio, can be controlled by the energy of the condensing carbon ions or atoms. In many practical cases, the energy of ions arriving at the surface of the growing film is determined by the bias applied to the substrate. The bias causes a sheath to form between substrate and plasma in which the potential difference between plasma potential and surface potential drops. In this contribution, we demonstrate that the same results can be obtained with grounded substrates by shifting the plasma potential. This plasma biasing (as opposed to substrate biasing) is shown to work well with pulsed cathodic carbon arcs, resulting in tetrahedral amorphous carbon (ta-C) films that are comparable to the films obtained with the conventional substrate bias. To verify the plasma bias approach, ta-C films were deposited by both conventional and plasma bias and characterized by transmission electron microscopy (TEM) and electron energy loss spectrometry (EELS). Detailed data for comparison of these films are provided.

}, keywords = {Diamond-like carbon films, Electron energy loss spectroscopy, Plasma bias, Substrate bias, transmission electron microscopy}, doi = {10.1016/j.surfcoat.2006.09.313}, author = {Andr{\'e} Anders and Nitisak Pasaja and Sunnie H.N. Lim and Tim C. Petersen and Vicki J. Keast} } @article {12184, title = {Physics of Arcing, and Implications to Sputter Deposition}, journal = {Thin Solid Films}, year = {2005}, abstract = {

Arcing on sputter targets and negatively biased substrates is known as one of the most challenging issues in physical vapor deposition of thin films and coatings. This is particularly true when high-rate deposition with reactive gases, large area deposition, and high power pulsed sputtering are considered. Much progress has been made in the development of power supplies that can handle arcing events with minimal damage to target and substrate. However, relatively little is known about the processes leading to arcs and the physics of the arcing events themselves. In this contribution, the issue of arcing is approached from the point of view of arc physics. Current knowledge of arcing and arc suppression is reviewed.

(Note: PDF contains both LBNL-54220 \& LBNL-54220 Journal.)

}, author = {Andr{\'e} Anders} } @conference {12187, title = {Plasma and Ion Sources in Large Area Coatings: A Review}, year = {2005}, abstract = {

Efficient deposition of high-quality coatings often requires controlled application of excited or ionized particles. These particles are either condensing (film-forming) or assisting by providing energy and momentum to the film growth process, resulting in densification, sputtering/etching, modification of stress, roughness, texture, etc. In this review, the technical means are surveyed enabling large area application of ions and plasmas, with ion energies ranging from a few eV to a few keV. Both semiconductor-type large area (single wafer or batch processing with ~ 1000 cm2) and in-line web and glass-coating-type large area (\> 107 m2 annually) are considered. Characteristics and differences between plasma and ion sources are explained. The latter include gridded and gridless sources. Many examples are given, including sources based on DC, RF, and microwave discharges, some with special geometries like hollow cathodes and E x B configurations.

}, author = {Andr{\'e} Anders} } @article {12189, title = {Plasma-Based Ion Implantation and Deposition: A Review of Physics, Technology, and Applications}, journal = {IEEE Transactions on Plasma Science}, volume = {33}, number = {6}, year = {2005}, pages = {1944-1959}, abstract = {

After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modelling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used of PBII\&D to produce surgical implants, bio- and blood-compatible surfaces and coatings, etc. With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures. We use the acronym PBII\&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.

}, author = {Jacques Pelletier and Andr{\'e} Anders} } @conference {12183, title = {Physics of Arcing, and Implications to Sputter Deposition}, booktitle = {International Conference on Coatings on Glass}, year = {2003}, month = {07/2004}, address = {Saarbrucken, Germany}, abstract = {

Arc and glow discharges are defined based on their cathode processes. Arcs are characterized by collective electron emission, which can be stationary with hot cathodes (thermionic arcs), or nonstationary with cold cathodes (cathodic arcs). A brief review on cathodic arc properties serves as the starting point to better understand arcing phenomena in sputtering. Although arcing occurs in both metal and reactive sputtering, it is more of an issue in the reactive case. Arcing occurs if sufficiently high field strength leads to thermal runaway of an electron emission site. The role of insulating layers and surface potential adjustment through current leakage is highlighted. In the situation of magnetron sputtering with racetrack, the need for a model with two spatial dimensions is shown. In many cases, arcing is initiated by breakdown of dielectric layers and inclusions. It is most efficiently prevented if formation and excessive charge-up of dielectric layers and inclusions can be avoided.

(Note: PDF contains both LBNL-54220 \& LBNL-54220 Journal.)

}, author = {Andr{\'e} Anders} } @article {12196, title = {Pressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source}, journal = {Materials Research Society Proceedings}, volume = {449}, year = {1997}, note = {

1996 MRS Fall Meeting

}, abstract = {

GaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~0.5 μm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs through a minimum canier concentration of ~1015 cm-3 was achieved.

}, doi = {10.1557/PROC-449-221}, author = {Michael S.H. Leung and Ralf Klockenbrink and Christian F. Kisielowski and Hiroaki Fujii and Joachim Kr{\"u}ger and Sudhir G. Subramanya and Andr{\'e} Anders and Zuzanna Liliental-Weber and Michael D. Rubin and Eicke R. Weber}, editor = {Joachim Kr{\"u}ger} }