@conference {1932,
	title = {Tungsten-Vanadium Oxide Sputtered Films for Electrochromic Devices},
	booktitle = {Electrochemical Society: Molecular Functions of Electroactive Thin Films},
	volume = {98-26},
	year = {1998},
	month = {11/1998},
	address = {Boston, MA},
	abstract = {<p>Mixed vanadium and tungsten oxide films with compositions ranging from 0 to 100\% vanadium (metals basis) were prepared by reactive sputtering from metallic vanadium and tungsten targets in an atmosphere of argon and oxygen. The vanadium content varied smoothly with the fraction of total power applied to the vanadium target. Films containing vanadium were more color neutral than pure tungsten oxide films, tending to gray-brown at high V fraction. The electrochromic switching performance of these films was investigated by in situ monitoring of their visible transmittance during lithium insertion/extraction cycling in a non-aqueous electrolyte (1M LiClO<sub>4</sub> in PC). the solar transmittance and reflectance was measured ex-situ. Films with vanadium content greater than about 15\%, exhibited a marked decrease in switching range. The coloration efficiencies followed a similar trend.</p>},
	author = {Thomas J. Richardson and Klaus von Rottkay and Jonathan L. Slack and Franck Michalak and Michael D. Rubin}
}
@article {1900,
	title = {Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films},
	journal = {Applied Physics Letters},
	volume = {68},
	number = {19},
	year = {1995},
	month = {03/1996},
	pages = {2702-2704},
	chapter = {2702},
	abstract = {<p>In this letter, we report the results of ion implantation of GaN using <sup>28</sup>Si and <sup>23</sup>Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 30 keV10^<sup>14</sup> cm<sup>-2</sup> Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 {\textdegree}C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties.</p>},
	keywords = {annealing, crystal doping, defect states, electrical properties, gallium nitrides, ion implantation, magnesium additions, microstructure, silicon additions},
	issn = {0003-6951},
	doi = {10.1063/1.116314},
	author = {James S. Chan and Nathan W. Cheung and Lawrence F. Schloss and Erin C.  Jones and William S. Wong and Nathan Newman and Xiaohong Liu and Eicke R. Weber and A. Gassman and Michael D. Rubin}
}
