01308nas a2200193 4500008004100000024001100041245010400052210006900156260003100225490000800256520065800264100002000922700001300942700002300955700002300978700001901001700002301020856007101043 1993 eng d aUC-40000aComparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy0 aComparison of AIN Films Grown by RF at Magnetron Sputtering and aSan Francisco, CAc04/19930 v3003 a
Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.
1 aChan, James, S.1 aFu, T.C.1 aCheung, Nathan, W.1 aRoss, Jennifer, T.1 aNewman, Nathan1 aRubin, Michael, D. uhttps://facades.lbl.gov/publications/comparison-ain-films-grown-rf