01539nas a2200241 4500008003900000022001400039245011000053210006900163260001100232300001400243490000700257520076200264653003001026653002201056653002601078100001701104700002801121700002201149700001501171700001601186700001901202856007601221 2012 d a0884-291400aImproved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition0 aImproved structural and electrical properties of thin ZnOAl film c3/2012 a857 - 8620 v273 a
Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 × 10−4 Ωcm. Resistivity as low as 5.2 × 10−4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films.
10aphysical vapor deposition10aPlasma deposition10aTransparent conductor1 aZhu, Yuankun1 aMendelsberg, Rueben, J.1 aLim, Sunnie, H.N.1 aZhu, Jiaqi1 aHan, Jiecai1 aAnders, André uhttps://facades.lbl.gov/publications/improved-structural-and-electrical