01433nas a2200289 4500008003900000022001400039245009300053210006900146260001200215300001600227490000700243520053600250653001100786653002100797653001600818653002800834653002000862100002200882700002500904700002600929700002800955700001800983700001901001700002701020700002401047856007201071 2011 d a1530-698400aDynamically Modulating the Surface Plasmon Resonance of Doped Semiconductor Nanocrystals0 aDynamically Modulating the Surface Plasmon Resonance of Doped Se c10/2011 a4415 - 44200 v113 a
Localized surface plasmon absorption features arise at high doping levels in semiconductor nanocrystals, appearing in the near-infrared range. Here we show that the surface plasmons of tin-doped indium oxide nanocrystal films can be dynamically and reversibly tuned by postsynthetic electrochemical modulation of the electron concentration. Without ion intercalation and the associated material degradation, we induce a > 1200 nm shift in the plasmon wavelength and a factor of nearly three change in the carrier density.
10adoping10aindium tin oxide10ananocrystal10aspectroelectrochemistry10asurface plasmon1 aGarcia, Guillermo1 aBuonsanti, Raffaella1 aRunnerstrom, Evan, L.1 aMendelsberg, Rueben, J.1 aLlordes, Anna1 aAnders, André1 aRichardson, Thomas, J.1 aMilliron, Delia, J. uhttps://facades.lbl.gov/publications/dynamically-modulating-surface