01711nas a2200229 4500008004100000245008000041210006900121490000800190520094800198100002501146700002301171700003101194700001901225700002101244700002701265700001901292700002901311700002301340700002101363700002101384856007601405 1997 eng d00aPressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source0 aPressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen0 v4493 a
GaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~0.5 μm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs through a minimum canier concentration of ~1015 cm-3 was achieved.
1 aLeung, Michael, S.H.1 aKlockenbrink, Ralf1 aKisielowski, Christian, F.1 aFujii, Hiroaki1 aKrüger, Joachim1 aSubramanya, Sudhir, G.1 aAnders, André1 aLiliental-Weber, Zuzanna1 aRubin, Michael, D.1 aWeber, Eicke, R.1 aKrüger, Joachim uhttps://facades.lbl.gov/publications/pressure-controlled-gan-mbe-growth01697nas a2200205 4500008004100000245008500041210006900126300000800195490000800203520102000211100001901231700003101250700002101281700002501302700002301327700002301350700002101373700002101394856007601415 1996 eng d00aImpact of Growth Temperature, Pressure and Strain on the Morphology of GaN Films0 aImpact of Growth Temperature Pressure and Strain on the Morpholo a2270 v4493 aGaN films grown on sapphire at different temperatures are investigated. A Volmer-Weber growth mode is observed at temperatures below 1000K that leads to thin films composed of oriented grains with finite size. Their size is temperature dependent and can actively be influenced by strain. Largest grains are observed in compressed films. It is argued that diffusing Ga ad-atoms dominate the observed effects with an activation energy of 2.3 ± 0.5 eV. Comparably large grain sizes are observed in films grown on off-axes sapphire substrates and on bulk GaN. This assures that the observed size limitation is a consequence of the 3D growth mode and not dependent on the choice of the substrate. In addition, the grain size and the surface roughness of the films depend on the nitrogen partial pressure in the molecular beam epitaxy (MBE) chamber,most likely due to collisions between the reactive species and the background gas molecules. This effect is utilized to grow improved nucleation layers on sapphire.
1 aFujii, Hiroaki1 aKisielowski, Christian, F.1 aKrüger, Joachim1 aLeung, Michael, S.H.1 aKlockenbrink, Ralf1 aRubin, Michael, D.1 aWeber, Eicke, R.1 aKrüger, Joachim uhttps://facades.lbl.gov/publications/impact-growth-temperature-pressure01453nas a2200265 4500008004100000050001500041245003900056210003900095260001400134300000800148490000600156520070600162100003100868700002100899700002500920700002300945700001900968700001900987700002701006700001901033700002301052700002101075700002101096856007001117 1996 eng d aLBNL-3985300aOrigin of Strain in GaN Thin Films0 aOrigin of Strain in GaN Thin Films aSingapore a5130 v43 aPhotoluminescence measurements are used to determine the strain in GaN thin films grown by Molecular Beam Epitaxy. The strain which originates from growth on lattice mismatched substrates and from differences in thermal expansion coefficients is found to be greatly relaxed. Residual strains are shown to depend on the thickness of GaN buffer layers and the III/V flux ration during main layer growth. The results strongly suggest that the residual biaxial strain caused by the post-growth cooling can be modified by the incorporation of point defects during the main layer growth which introduce an additional hydrostatic strain field. The effect allows for strain engineering of GaN crystals.
1 aKisielowski, Christian, F.1 aKrüger, Joachim1 aLeung, Michael, S.H.1 aKlockenbrink, Ralf1 aFujii, Hiroaki1 aSuski, Tadeusz1 aSubramanya, Sudhir, G.1 aAger, Joel, W.1 aRubin, Michael, D.1 aWeber, Eicke, R.1 aKrüger, Joachim uhttps://facades.lbl.gov/publications/origin-strain-gan-thin-films02402nas a2200265 4500008004100000245004700041210004700088260001200135300001600147490000700163520162000170100003101790700002101821700002001842700001901862700001901881700002001900700002901920700002301949700002101972700002501993700002202018700002102040856007502061 1996 eng d00aStrain Related Phenomena in GaN Thin Films0 aStrain Related Phenomena in GaN Thin Films c12/1996 a17745-177530 v543 aPhotoluminescence (PL), Raman spectroscopy, and x-ray diffraction are employed to demonstrate the co-existence of a biaxial and a hydrostatic strain that can be present in GaN thin films. The biaxial strain originates from growth on lattice-mismatched substrates and from post-growth cooling. An additional hydrostatic strain is shown to be introduced by the presence of point defects. A consistent description of the experimental results is derived within the limits of the linear and isotropic elastic theory using a Poisson ratio nu =0.23+/-0.06 and a bulk modulus B=200+/-20 GPa. These isotropic elastic constants help to judge the validity of published anisotropic elastic constants that vary greatly. Calibration constants for strain-induced shifts of the near-band-edge PL lines with respect to the E2 Raman mode are given for strain-free, biaxially strained, and hydrostatically contracted or expanded thin films. They allow us to extract differences between hydrostatic and biaxial stress components if present. In particular, we determine that a biaxial stress of one GPa would shift the near-band-edge PL lines by 27+/-2 meV and the E2 Raman mode by 4.2+/-0.3 cm-1 by use of the listed isotropic elastic constants. It is expected from the analyses that stoichiometric variations in the GaN thin films together with the design of specific buffer layers can be utilized to strain engineer the material to an extent that greatly exceeds the possibilities known from other semiconductor systems because of the largely different covalent radii of the Ga and the N atom.
1 aKisielowski, Christian, F.1 aKrüger, Joachim1 aRuvimov, Sergei1 aSuski, Tadeusz1 aAger, Joel, W.1 aJones, Erin, C.1 aLiliental-Weber, Zuzanna1 aRubin, Michael, D.1 aWeber, Eicke, R.1 aBremser, Michael, D.1 aDavis, Robert, F.1 aKrüger, Joachim uhttps://facades.lbl.gov/publications/strain-related-phenomena-gan-thin02195nas a2200277 4500008004100000022001400041245010300055210006900158260001200227300001200239490000700251520133500258653002301593653000801616653003301624653002401657100001301681700001901694700002001713700002001733700001801753700002301771700002301794700002101817856007901838 1995 eng d a0361-523500aThe Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy0 aInfluence of Nitrogen Ion Energy on the Quality of GaN Films Gro c04/1995 a249-2550 v243 aSince the growth of GaN using molecular beam epitaxy (MBE) occurs under metastable growth conditions, activated nitrogen is required to drive the forward synthesis reaction. In the process of exciting the nitrogen using a plasma or ion-beam source, species with large kinetic energies are generated. Impingement on the growth surface by these species can result in subsurface damage to the growing film, as well as an enhancement of the reverse decomposition reaction rate. In this study, we investigate the effect of the kinetic energy of the impinging nitrogen ions during growth on the resulting optical and structural properties of GaN films. Strong band-edge photoluminescence and cathodoluminescence are found when a kinetic energy of ~10 eV are used, while luminescence is not detectable when the kinetic energies exceeds 18 eV. Also, we find that the use of conductive SiC substrates results in more homogeneous luminescence than the use of insulating sapphire substrates. This is attributed to sample surface charging in the case of sapphire substrates and subsequent variation in the incident ion flux and kinetic energy across the growth surface.This study clearly shows that the quality of GaN films grown by MBE are presently limited by damage from the impingement of high energy species on the growth surface.
10aActivated nitrogen10aGaN10amolecular beam epitaxy (MBE)10anitrogen ion energy1 aFu, T.C.1 aNewman, Nathan1 aJones, Erin, C.1 aChan, James, S.1 aLiu, Xiaohong1 aRubin, Michael, D.1 aCheung, Nathan, W.1 aWeber, Eicke, R. uhttps://facades.lbl.gov/publications/influence-nitrogen-ion-energy-quality01809nas a2200361 4500008004100000022001400041245007600055210006900131260001200200300001400212490000700226520074400233653001400977653001900991653001801010653002601028653002101054653002101075653002401096653001901120653002201139100002001161700002301181700002601204700002001230700002201250700001901272700001801291700002101309700001601330700002301346856007801369 1995 eng d a0003-695100aThermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films0 aThermal Annealing Characteristics of Si and Mgimplanted GaN Thin c03/1996 a2702-27040 v683 aIn this letter, we report the results of ion implantation of GaN using 28Si and 23Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 30 keV10^14 cm-2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties.
10aannealing10acrystal doping10adefect states10aelectrical properties10agallium nitrides10aion implantation10amagnesium additions10amicrostructure10asilicon additions1 aChan, James, S.1 aCheung, Nathan, W.1 aSchloss, Lawrence, F.1 aJones, Erin, C.1 aWong, William, S.1 aNewman, Nathan1 aLiu, Xiaohong1 aWeber, Eicke, R.1 aGassman, A.1 aRubin, Michael, D. uhttps://facades.lbl.gov/publications/thermal-annealing-characteristics-si01409nas a2200241 4500008004100000050001400041245008900055210006900144520063300213100001900846700001300865700001200878700002900890700002300919700002000942700002000962700002300982700002201005700001701027700002301044700002101067856007901088 1994 eng d aLBL-3729600aFundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy0 aFundamental MaterialsIssues Involved in the Growth of GaN by Mol3 aGallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.
1 aNewman, Nathan1 aFu, T.C.1 aLiu, Z.1 aLiliental-Weber, Zuzanna1 aRubin, Michael, D.1 aChan, James, S.1 aJones, Erin, C.1 aRoss, Jennifer, T.1 aTidswell, Ian, M.1 aYu, Kin, Man1 aCheung, Nathan, W.1 aWeber, Eicke, R. uhttps://facades.lbl.gov/publications/fundamental-materials-issues-involved