01524nas a2200157 4500008004100000050001500041245011400056210006900170260003600239490000600275520094200281100001901223700002401242700002701266856007301293 2008 eng d aLBNL-1089E00aElectrochromically switched, gas-reservoir metal hydride devices with application to energy-efficient windows0 aElectrochromically switched gasreservoir metal hydride devices w aEindhoven, Netherlandsc08/20030 v13 a

Proof-of-principle gas-reservoir MnNiMg electrochromic mirror devices have been investigated. In contrast to conventional electrochromic approaches, hydrogen is stored (at low concentration) in the gas volume between glass panes of the insulated glass units (IGUs). The elimination of a solid state ion storage layer simplifies the layer stack, enhances overall transmission, and reduces cost. The cyclic switching properties were demonstrated and system durability improved with the incorporation a thin Zr barrier layer between the MnNiMg layer and the Pd catalyst. Addition of 9% silver to the palladium catalyst further improved system durability. About 100 full cycles have been demonstrated before devices slow considerably. Degradation of device performance appears to be related to Pd catalyst mobility, rather than delamination or metal layer oxidation issues originally presumed likely to present significant challenges.

1 aAnders, André1 aSlack, Jonathan, L.1 aRichardson, Thomas, J. uhttps://facades.lbl.gov/publications/electrochromically-switched-gas02708nas a2200109 4500008003900000245010700039210006900146260002300215520227300238100001902511856006802530 2005 d00aEnergetic or Not Energetic: Considerations for Fabricating Nanostructures by Physical Vapor Deposition0 aEnergetic or Not Energetic Considerations for Fabricating Nanost aSingaporec06/20053 a

Physical vapor deposition (PVD) has greatly matured in terms of growth modeling and equipment available. For this reason, and the often-required limitation to low-temperature processing, it is app ealing to utilize PVD methods not only for thin films but also for the synthesis of nanostructures. This is true even as many other methods enjoy the advantage of not needing high vacuum equipment.

PVD techniques are traditionally classified by the method of vapor generation, though here it is argued that a physically meaningful classification can be based on the energetics of film-forming species. At the low end of the energy scale, evaporation methods can be used to produce columnar structures with significant porosity. Sputtering at high pressure results in similar properties. This regime is preferred for sculptured structures, which involves moving tilted substrates (chiral films, chevrons, etc. [1]). As the energy is increased, so is the mobility of surface atoms, and we enter an energy regime that is widely used in thin film deposition by magnetron sputtering. Recently, high power pulsed sputtering has evolved as an energetic extension of conventional sputtering [2]. The enhanced degree of ionization enables the efficient application of bias techniques. Additionally, species seem to have higher kinetic energy. Ultimately, one would like to have fully ionized plasmas to fully exploit biasing, which can be done by using filtered cathodic arc plasmas [3]. Considering the high-energy range, substrates can be ion-treated by immersing them in a plasma and applying high voltage pulses, a technique known as plasma-based ion implantation.

Nanostructures are preferentially fabricated at either the low energy (< 1 eV, e.g. for sculptured films) or very high energy (> 1 keV, e.g. metal filling of lithographically produced nanotrenches [4], or formation of precipitates or bubbles by ion implantation [5]). At the intermediate energy range, ~ 100 eV, nanoscale processing of interfaces is used to obtain coatings with superior adhesion. Subplantation growth is facilitated at this energy, which is especially important for tuning the structure and properties of diamond-like carbon and a range of nitride and oxide materials.

1 aAnders, André uhttps://facades.lbl.gov/publications/energetic-or-not-energetic01808nas a2200241 4500008004100000022001500041245010500056210006900161260001200230300001200242490000700254520105000261653001501311653002401326653002201350653002501372653002101397100001801418700001801436700001901454700001901473856007401492 2004 eng d a0093-3813 00aEffect of Ion Mass and Charge State on Transport Vacuum Arc Plasmas Through a Biased Magnetic Filter0 aEffect of Ion Mass and Charge State on Transport Vacuum Arc Plas c04/2004 a433-4390 v323 a

The effect of ion mass and charge state on plasma transport through a 90 deg.-curved magnetic filter is experimentally investigated using a pulsed cathodic arc source. Graphite, copper, and tungsten were selected as test materials. The filter was a bent copper coil biased via the voltage drop across a low-ohm, selfbias resistor. Ion transport is accomplished via a guiding electric field, whose potential forms a trough shaped by the magnetic guiding field of the filter coil. Evaluation was done by measuring the filtered ion current and determination of the particle system coefficient, which can be defined as the ratio of filtered ion current, divided by the mean ion charge state, to the arc current. It was found that the ion current and particle system coefficient decreased as the mass-to-charge ratio of ions increased. This result can be qualitatively interpreted by a very simple model of ion transport that is based on compensation of the centrifugal force by the electric force associated with the guiding potential trough.

10aArc plasma10acathodic vacuum arc10aion charge states10amacroparticle filter10aplasma transport1 aByon, Eungsun1 aKim, Jong-Kuk1 aKwon, Sik-Chol1 aAnders, André uhttps://facades.lbl.gov/publications/effect-ion-mass-and-charge-state02094nas a2200133 4500008004100000050001500041245010000056210006900156260002300225520159700248100001801845700001901863856007801882 2003 eng d aLBNL-5156800aEffect of Underlayer on Coalescence of Silver Islands Grown by Filtered Cathodic Arc Deposition0 aEffect of Underlayer on Coalescence of Silver Islands Grown by F aSan Diegoc05/20033 a

Ultrathin silver films that are not continuous show relatively high absorption in the visible and low reflection in the infrared. For low-emissivity application on window glass, coalescence of silver islands is crucial for obtaining the desired optical properties of the coating, namely high transparence in the visible and high reflectivity in the infrared. It is well known that the energy of ions arriving at the substrate and the type of underlayer affect nucleation and growth of silver islands. There are a number of studies on nucleation and growth, but little is known about coalescence of silver islands synthesized by more energetic condensation, e.g. filtered cathodic vacuum arc (FCVA). In this work, the effect of underlayer on nucleation and growth of silver films deposited by FCVA was investigated by transmission electron microscopy (TEM) and atomic force microscopy (AFM). The results arescompared with data obtained by magnetron sputtering.

From the results, plane and titanium-oxide-coated glass requires more material to achieve the same value of resistance than for the zinc oxide coated glass. It is related with the energy of interaction between the surface and the silver atom. Silver films made by cathodic arc deposition show an earlier onset of island coalescence and formation of short links. It was found that silver islands in energetic deposition exhibit a reduced aspect ratio when compared to evaporation and sputtering. Nb underlayer affects nucleation and growth of coalescence of silver only in the case of few monolayer of Nb was introduced.

1 aByon, Eungsun1 aAnders, André uhttps://facades.lbl.gov/publications/effect-underlayer-coalescence-silver01128nas a2200205 4500008004100000245008600041210006900127260001200196300001000208490000700218520044500225653003000670653002000700653002300720653003500743100001900778700002400797700002300821856007800844 1999 eng d00aEvaluation of the Plasma Distribution of a Quasi-Linear Constricted Plasma Source0 aEvaluation of the Plasma Distribution of a QuasiLinear Constrict c02/1999 a82-830 v273 a

The quasi-linear constricted plasma source is a downstream plasma source with ten linearly aligned discharge cells. Each cell operates on the basis of a constricted glow discharge. The plasma output can easily be monitored by the plasma-emitted light. The information is not only intuitive but can also be used to operate on-line feedback control of the plasma source which is important for large-area plasma processing of materials.

10aConstricted plasma source10agas plasma flow10aplasma diagnostics10aplasma processing of materials1 aAnders, André1 aMacGill, Robert, A.1 aRubin, Michael, D. uhttps://facades.lbl.gov/publications/evaluation-plasma-distribution-quasi