01677nas a2200301 4500008004100000022001400041245012700055210006900182300001000251490000700261520072500268653002000993653002101013653001901034653001401053653001601067653002101083653002101104653002401125653002701149653002401176100002301200700001901223700002001242700001301262700002301275856007701298 1993 eng d a0003-695100aP-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg0 aPType Gallium Nitride by Reactive IonBeam Molecular Beam Epitaxy a64-660 v643 a
Gallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm−3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.
10acarrier density10acarrier mobility10acrystal doping10adiffusion10aevaporation10agallium nitrides10aion implantation10amagnesium additions10amolecular beam epitaxy10ap−type conductors1 aRubin, Michael, D.1 aNewman, Nathan1 aChan, James, S.1 aFu, T.C.1 aRoss, Jennifer, T. uhttps://facades.lbl.gov/publications/p-type-gallium-nitride-reactive-ion