01809nas a2200361 4500008004100000022001400041245007600055210006900131260001200200300001400212490000700226520074400233653001400977653001900991653001801010653002601028653002101054653002101075653002401096653001901120653002201139100002001161700002301181700002601204700002001230700002201250700001901272700001801291700002101309700001601330700002301346856007801369 1995 eng d a0003-695100aThermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films0 aThermal Annealing Characteristics of Si and Mgimplanted GaN Thin c03/1996 a2702-27040 v683 a
In this letter, we report the results of ion implantation of GaN using 28Si and 23Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 30 keV10^14 cm-2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties.
10aannealing10acrystal doping10adefect states10aelectrical properties10agallium nitrides10aion implantation10amagnesium additions10amicrostructure10asilicon additions1 aChan, James, S.1 aCheung, Nathan, W.1 aSchloss, Lawrence, F.1 aJones, Erin, C.1 aWong, William, S.1 aNewman, Nathan1 aLiu, Xiaohong1 aWeber, Eicke, R.1 aGassman, A.1 aRubin, Michael, D. uhttps://facades.lbl.gov/publications/thermal-annealing-characteristics-si01677nas a2200301 4500008004100000022001400041245012700055210006900182300001000251490000700261520072500268653002000993653002101013653001901034653001401053653001601067653002101083653002101104653002401125653002701149653002401176100002301200700001901223700002001242700001301262700002301275856007701298 1993 eng d a0003-695100aP-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg0 aPType Gallium Nitride by Reactive IonBeam Molecular Beam Epitaxy a64-660 v643 aGallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm−3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.
10acarrier density10acarrier mobility10acrystal doping10adiffusion10aevaporation10agallium nitrides10aion implantation10amagnesium additions10amolecular beam epitaxy10ap−type conductors1 aRubin, Michael, D.1 aNewman, Nathan1 aChan, James, S.1 aFu, T.C.1 aRoss, Jennifer, T. uhttps://facades.lbl.gov/publications/p-type-gallium-nitride-reactive-ion