01644nas a2200205 4500008004100000245011300041210006900154260001200223300001400235490000800249520093200257653003001189653002701219653002401246653002301270653002501293100002301318700001901341856007801360 2007 eng d00aPhysical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering0 aPhysical properties of erbium implanted tungsten oxide films dep c05/2007 a5264-52690 v5153 a

Amorphous and partially crystalline WO3 thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015 ions/cm2. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures

10aDual magnetron sputtering10aelectrical resistivity10aEr ion implantation10aoptical properties10atungsten oxide films1 aMohamed, Sodky, H.1 aAnders, André uhttps://facades.lbl.gov/publications/physical-properties-erbium-implanted02166nas a2200193 4500008004100000245011300041210006900154300001400223490000800237520149200245653003001737653001501767653002301782653001501805653003501820100002301855700001901878856007501897 2006 eng d00aStructural, optical and electrical properties of WOxNy films deposited by reactive dual magnetron sputtering0 aStructural optical and electrical properties of WOxNy films depo a2977-29830 v2013 a

Thin films of tungsten oxynitrides were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even relatively small amounts of oxygen led to close-to-stoichiometric WO3, with little incorporation of nitrogen, therefore the films were labeled as WOx(Ny). Oxygen had a great effect not only on the composition but on the structure of WOx(Ny) films, as shown by Rutherford backscattering and X-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89% of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high. The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 × 108 to 1.82 × 10− 2 Ω cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOx(Ny) films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

10aDual magnetron sputtering10aelectrical10aoptical properties10astructural10atungsten oxynitride thin films1 aMohamed, Sodky, H.1 aAnders, André uhttps://facades.lbl.gov/publications/structural-optical-and-electrical