01409nas a2200241 4500008004100000050001400041245008900055210006900144520063300213100001900846700001300865700001200878700002900890700002300919700002000942700002000962700002300982700002201005700001701027700002301044700002101067856007901088 1994 eng d aLBL-3729600aFundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy0 aFundamental MaterialsIssues Involved in the Growth of GaN by Mol3 a
Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.
1 aNewman, Nathan1 aFu, T.C.1 aLiu, Z.1 aLiliental-Weber, Zuzanna1 aRubin, Michael, D.1 aChan, James, S.1 aJones, Erin, C.1 aRoss, Jennifer, T.1 aTidswell, Ian, M.1 aYu, Kin, Man1 aCheung, Nathan, W.1 aWeber, Eicke, R. uhttps://facades.lbl.gov/publications/fundamental-materials-issues-involved