01453nas a2200265 4500008004100000050001500041245003900056210003900095260001400134300000800148490000600156520070600162100003100868700002100899700002500920700002300945700001900968700001900987700002701006700001901033700002301052700002101075700002101096856007001117 1996 eng d aLBNL-3985300aOrigin of Strain in GaN Thin Films0 aOrigin of Strain in GaN Thin Films aSingapore a5130 v43 a
Photoluminescence measurements are used to determine the strain in GaN thin films grown by Molecular Beam Epitaxy. The strain which originates from growth on lattice mismatched substrates and from differences in thermal expansion coefficients is found to be greatly relaxed. Residual strains are shown to depend on the thickness of GaN buffer layers and the III/V flux ration during main layer growth. The results strongly suggest that the residual biaxial strain caused by the post-growth cooling can be modified by the incorporation of point defects during the main layer growth which introduce an additional hydrostatic strain field. The effect allows for strain engineering of GaN crystals.
1 aKisielowski, Christian, F.1 aKrüger, Joachim1 aLeung, Michael, S.H.1 aKlockenbrink, Ralf1 aFujii, Hiroaki1 aSuski, Tadeusz1 aSubramanya, Sudhir, G.1 aAger, Joel, W.1 aRubin, Michael, D.1 aWeber, Eicke, R.1 aKrüger, Joachim uhttps://facades.lbl.gov/publications/origin-strain-gan-thin-films