01711nas a2200229 4500008004100000245008000041210006900121490000800190520094800198100002501146700002301171700003101194700001901225700002101244700002701265700001901292700002901311700002301340700002101363700002101384856007601405 1997 eng d00aPressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source0 aPressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen0 v4493 a
GaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~0.5 μm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs through a minimum canier concentration of ~1015 cm-3 was achieved.
1 aLeung, Michael, S.H.1 aKlockenbrink, Ralf1 aKisielowski, Christian, F.1 aFujii, Hiroaki1 aKrüger, Joachim1 aSubramanya, Sudhir, G.1 aAnders, André1 aLiliental-Weber, Zuzanna1 aRubin, Michael, D.1 aWeber, Eicke, R.1 aKrüger, Joachim uhttps://facades.lbl.gov/publications/pressure-controlled-gan-mbe-growth