TY - CONF T1 - Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy Y1 - 1994/ A1 - Nathan Newman A1 - T.C. Fu A1 - Z. Liu A1 - Zuzanna Liliental-Weber A1 - Michael D. Rubin A1 - James S. Chan A1 - Erin C. Jones A1 - Jennifer T. Ross A1 - Ian M. Tidswell A1 - Kin Man Yu A1 - Nathan W. Cheung A1 - Eicke R. Weber AB - Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail. U2 - LBL-37296 ER -