TY - CONF T1 - Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy T2 - Materials Research Society Y1 - 1993/04// A1 - James S. Chan A1 - T.C. Fu A1 - Nathan W. Cheung A1 - Jennifer T. Ross A1 - Nathan Newman A1 - Michael D. Rubin AB - Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature. JF - Materials Research Society CY - San Francisco, CA VL - 300 U1 -

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U2 - LBL-35660 ER -