TY - JOUR T1 - P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg JF - Applied Physics Letters Y1 - 1993/ SP - 64 EP - 66 A1 - Michael D. Rubin A1 - Nathan Newman A1 - James S. Chan A1 - T.C. Fu A1 - Jennifer T. Ross KW - carrier density KW - carrier mobility KW - crystal doping KW - diffusion KW - evaporation KW - gallium nitrides KW - ion implantation KW - magnesium additions KW - molecular beam epitaxy KW - p−type conductors AB - Gallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm−3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported. VL - 64 IS - 1 U1 -

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U2 - LBL-34413 JO - Appl. Phys. Lett. DO - 10.1063/1.110870 ER -