TY - JOUR T1 - Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition JF - Journal of Materials Research Y1 - 2012/ SP - 857 EP - 862 A1 - Yuankun Zhu A1 - Rueben J. Mendelsberg A1 - Sunnie H.N. Lim A1 - Jiaqi Zhu A1 - Jiecai Han A1 - André Anders KW - physical vapor deposition KW - Plasma deposition KW - Transparent conductor AB - Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 × 10−4 Ωcm. Resistivity as low as 5.2 × 10−4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films. VL - 27 IS - 05 JO - J. Mater. Res. DO - 10.1557/jmr.2011.342 ER -