TY - JOUR T1 - Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition JF - Journal of Materials Research Y1 - 2012/ SP - 857 EP - 862 A1 - Yuankun Zhu A1 - Rueben J. Mendelsberg A1 - Sunnie H.N. Lim A1 - Jiaqi Zhu A1 - Jiecai Han A1 - André Anders KW - physical vapor deposition KW - Plasma deposition KW - Transparent conductor AB - Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 × 10−4 Ωcm. Resistivity as low as 5.2 × 10−4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films. VL - 27 IS - 05 JO - J. Mater. Res. DO - 10.1557/jmr.2011.342 ER - TY - JOUR T1 - Achieving high mobility ZnO:Al at very high growth rates by dc filtered cathodic arc deposition JF - Journal of Physics D: Applied Physics Y1 - 2011/ SP - 232003 EP - 232007 A1 - Rueben J. Mendelsberg A1 - Sunnie H.N. Lim A1 - Yuankun Zhu A1 - Joe Wallig A1 - Delia J. Milliron A1 - André Anders AB - Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500–1300 nm thick and highly transparent ZnO : Al films were grown on glass at rates exceeding 250 nm min−1 while maintaining resistivity below 5 × 10−4 Ω cm with electron mobility as high as 60 cm2 V−1 s−1. VL - 44 IS - 23 U2 - LBNL-5585E JO - J. Phys. D: Appl. Phys. DO - 10.1088/0022-3727/44/23/232003 ER - TY - JOUR T1 - Dynamically Modulating the Surface Plasmon Resonance of Doped Semiconductor Nanocrystals JF - Nano Letters Y1 - 2011/10// SP - 4415 EP - 4420 A1 - Guillermo Garcia A1 - Raffaella Buonsanti A1 - Evan L. Runnerstrom A1 - Rueben J. Mendelsberg A1 - Anna Llordes A1 - André Anders A1 - Thomas J. Richardson A1 - Delia J. Milliron KW - doping KW - indium tin oxide KW - nanocrystal KW - spectroelectrochemistry KW - surface plasmon AB - Localized surface plasmon absorption features arise at high doping levels in semiconductor nanocrystals, appearing in the near-infrared range. Here we show that the surface plasmons of tin-doped indium oxide nanocrystal films can be dynamically and reversibly tuned by postsynthetic electrochemical modulation of the electron concentration. Without ion intercalation and the associated material degradation, we induce a > 1200 nm shift in the plasmon wavelength and a factor of nearly three change in the carrier density. VL - 11 IS - 10 JO - Nano Lett. DO - 10.1021/nl202597n ER -