TY - JOUR T1 - Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films JF - Applied Physics Letters Y1 - 1996/03// SP - 2702 EP - 2704 A1 - James S. Chan A1 - Nathan W. Cheung A1 - Lawrence F. Schloss A1 - Erin C. Jones A1 - William S. Wong A1 - Nathan Newman A1 - Xiaohong Liu A1 - Eicke R. Weber A1 - A. Gassman A1 - Michael D. Rubin KW - annealing KW - crystal doping KW - defect states KW - electrical properties KW - gallium nitrides KW - ion implantation KW - magnesium additions KW - microstructure KW - silicon additions AB - In this letter, we report the results of ion implantation of GaN using 28Si and 23Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 30 keV10^14 cm-2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. VL - 68 IS - 19 U1 -

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U2 - LBL-37372 DO - 10.1063/1.116314 ER -