TY - JOUR T1 - Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films JF - Applied Physics Letters Y1 - 1996/03// SP - 2702 EP - 2704 A1 - James S. Chan A1 - Nathan W. Cheung A1 - Lawrence F. Schloss A1 - Erin C. Jones A1 - William S. Wong A1 - Nathan Newman A1 - Xiaohong Liu A1 - Eicke R. Weber A1 - A. Gassman A1 - Michael D. Rubin KW - annealing KW - crystal doping KW - defect states KW - electrical properties KW - gallium nitrides KW - ion implantation KW - magnesium additions KW - microstructure KW - silicon additions AB - In this letter, we report the results of ion implantation of GaN using 28Si and 23Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 30 keV10^14 cm-2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. VL - 68 IS - 19 U1 -

Windows and Daylighting Group

U2 - LBL-37372 DO - 10.1063/1.116314 ER - TY - JOUR T1 - P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg JF - Applied Physics Letters Y1 - 1993/ SP - 64 EP - 66 A1 - Michael D. Rubin A1 - Nathan Newman A1 - James S. Chan A1 - T.C. Fu A1 - Jennifer T. Ross KW - carrier density KW - carrier mobility KW - crystal doping KW - diffusion KW - evaporation KW - gallium nitrides KW - ion implantation KW - magnesium additions KW - molecular beam epitaxy KW - p−type conductors AB - Gallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm−3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported. VL - 64 IS - 1 U1 -

Windows and Daylighting Group

U2 - LBL-34413 JO - Appl. Phys. Lett. DO - 10.1063/1.110870 ER -