TY - JOUR T1 - Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering JF - Thin Solid Films Y1 - 2007/05// SP - 5264 EP - 5269 A1 - Sodky H. Mohamed A1 - André Anders KW - Dual magnetron sputtering KW - electrical resistivity KW - Er ion implantation KW - optical properties KW - tungsten oxide films AB - Amorphous and partially crystalline WO3 thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015 ions/cm2. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures VL - 515 IS - 13 U1 -

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U2 - LBNL-62248 DO - 10.1016/j.tsf.2006.12.179 ER -