TY - JOUR T1 - Pressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source JF - Materials Research Society Proceedings Y1 - 1997/ A1 - Michael S.H. Leung A1 - Ralf Klockenbrink A1 - Christian F. Kisielowski A1 - Hiroaki Fujii A1 - Joachim Krüger A1 - Sudhir G. Subramanya A1 - André Anders A1 - Zuzanna Liliental-Weber A1 - Michael D. Rubin A1 - Eicke R. Weber ED - Joachim Krüger AB - GaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~0.5 μm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs through a minimum canier concentration of ~1015 cm-3 was achieved. VL - 449 IS - 221 N1 -

1996 MRS Fall Meeting

U1 -

Windows and Daylighting Group

U2 - LBNL-39851 JO - MRS Proceedings DO - 10.1557/PROC-449-221 ER -