%0 Conference Paper %D 1994 %T Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy %A Nathan Newman %A T.C. Fu %A Z. Liu %A Zuzanna Liliental-Weber %A Michael D. Rubin %A James S. Chan %A Erin C. Jones %A Jennifer T. Ross %A Ian M. Tidswell %A Kin Man Yu %A Nathan W. Cheung %A Eicke R. Weber %X

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

%G eng %L LBL-37296 %2 LBL-37296