%0 Conference Paper %B Materials Research Society %D 1993 %T Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy %A James S. Chan %A T.C. Fu %A Nathan W. Cheung %A Jennifer T. Ross %A Nathan Newman %A Michael D. Rubin %X

Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.

%B Materials Research Society %C San Francisco, CA %V 300 %8 04/1993 %G eng %1

Windows and Daylighting Group

%2 LBL-35660