%0 Journal Article %J Thin Solid Films %D 2007 %T Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering %A Sodky H. Mohamed %A André Anders %K Dual magnetron sputtering %K electrical resistivity %K Er ion implantation %K optical properties %K tungsten oxide films %X

Amorphous and partially crystalline WO3 thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015 ions/cm2. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures

%B Thin Solid Films %V 515 %P 5264-5269 %8 05/2007 %G eng %N 13 %1

Windows and Daylighting Group

%2 LBNL-62248 %& 5264 %R 10.1016/j.tsf.2006.12.179