%0 Journal Article %J Journal of Materials Research %D 2012 %T Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition %A Yuankun Zhu %A Rueben J. Mendelsberg %A Sunnie H.N. Lim %A Jiaqi Zhu %A Jiecai Han %A André Anders %K physical vapor deposition %K Plasma deposition %K Transparent conductor %X

Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 × 10−4 Ωcm. Resistivity as low as 5.2 × 10−4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films.

%B Journal of Materials Research %V 27 %P 857 - 862 %8 3/2012 %N 05 %! J. Mater. Res. %R 10.1557/jmr.2011.342