Publications
"Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films." Applied Physics Letters 68.19 (1995) 2702-2704. LBL-37372.
. "P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg." Applied Physics Letters 64.1 (1993) 64-66. LBL-34413.
. "The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy." Journal of Electronic Materials 24.4 (1995) 249-255. LBL-37223.
. "Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy." 1994. LBL-37296.
. "Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy." Materials Research Society. Vol. 300. San Francisco, CA, 1993. LBL-35660.
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