P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg

TitleP-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg
Publication TypeJournal Article
Year of Publication1993
AuthorsMichael D Rubin, Nathan Newman, James S Chan, T.C. Fu, Jennifer T Ross
JournalApplied Physics Letters
Volume64
64
Issue1
Pagination64-66
ISSN0003-6951
Keywordscarrier density, carrier mobility, crystal doping, diffusion, evaporation, gallium nitrides, ion implantation, magnesium additions, molecular beam epitaxy, p−type conductors
Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm−3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.

DOI10.1063/1.110870
LBNL Report Number

LBL-34413

Short TitleAppl. Phys. Lett.